Characterization of InGaAs/InAlAs diodes

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Diodes containing InGaAs/InAlAs multiple quantum wells often do not show a photocurrent signal at low temperatures. The I vs V curves of such diodes have been investigated as a function of temperature, with and without illumination by radiation of different wavelength ranges. The results show that current carriers are trapped either in the quantum wells or at the interfaces. The current carriers can be electrically or thermally activated. The activation energy for such traps increases with the Ga content in the quantum well alloy. Noise measurements of sch structures were performed and the results confirm the presence of defects at the interfaces.

The results obtained can be found in the following references:

  • Effect of carrier traps in InGaAs/InAlAs strained multiple quantum wells

    M. P. Pires, F. Guastavino, B. Yavich e P. L. Souza
    Proceedings of the 26th International Conference on Semiconductor Physics (2002).
  • Anomalous I vs V characteristics of InGaAs/InAlAs strained multiple quantum well structures for amplitude modulators

    M. P. Pires, F. Guastavino, B. Yavich e P. L. Souza
    Semiconductor Science and Technology 18, 729-731 (2003).
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