Quantum wires


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We investigate one-dimensional nanostructures, the so-called quantum wires, based on III-V semiconductors. They are grown by MOVPE either using nanoparticles as catalysts or selective are growth for the fabrication of single photon emitters or solar cells.

Fig. 1 Scanning electron microscopy (SEM) image of nanowires GaAs seen at an angle and the top (lower figure). The nanowires were grown by selective growth method in MOVPE.

Fig. 2 InGaP nanowire 200 nanometers in diameter. The electrical contacts produced by electron beam lithography. (Larger image in 25000 times).

The results obtained can be found in the following references:

  • Process calibration of HSQ mask for selective area growth (SAG) of InAs/GaAs QD-in-NW for single photon emitters In: Brazilian Workshop on Semiconductor Physics, 2015, Uberlândia.

    Kawabata, R. M. S.; JIN, J.; Pires, M. P.; SOUZA, P. L.; GRUTZMACHER, D.; KARDYNAL, B.; HARTDEGEN, H.
    Book of Abstracts. , 2015.

  • Selective Area Growth (SAG) of InAs/GaAs quantum-dot-in-wire with an N2 carrier MOCVD In: European Workshop on Metalorganic Vapor Phase Epitaxy, 2015, Lund.

    KAWABATA, RUDY M. S.; JIN, J.; Pires, M. P.; SOUZA, P. L.; GRUTZMACHER, D.; KARDYNAL, B.; HARDTDEGEN, H.
    Book of Abstracts. , 2015.
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